Product Summary
The APT150GN120J is an IGBT. Utilizing the latest Field Stop and Trench Gate technologies, the APT150GN120J has ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. Applications of the APT150GN120J are: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS.
Parametrics
APT150GN120J absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 1200V; (2)Gate-Emitter Voltage, VGE: ±30V; (3)Continuous Collector Current @ TC = 25℃, IC1: 215A; (4)Continuous Collector Current @ TC = 110℃, IC2: 99A; (5)Pulsed Collector Current, ICM: 450A; (6)Switching Safe Operating Area @ TJ= 150℃, SSOA: 450A @ 1200V; (7)Total Power Dissipation, PD: 625W; (8)Operating and Storage Junction Temperature Range, Tj, Tstg: -55 to 150℃; (9)Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec, TL: 300℃.
Features
APT150GN120J features: (1)1200V Field Stop; (2)Trench Gate: Low VCE(on); (3)Easy Paralleling; (4)Intergrated Gate Resistor: Low EMI, High Reliability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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APT150GN120J |
IGBT 1200V 215A 625W SOT227 |
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APT150GN120JDQ4 |
IGBT 1200V 215A 625W SOT227 |
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