Product Summary

The BFG135A is an NPN Silicon RF Transistor.

Parametrics

BFG135A absolute maximum ratings: (1)Collector-emitter voltage VCEO: 15 V; (2)Collector-emitter voltage VCES: 25V; (3)Collector-base voltage VCBO: 25V; (4)Emitter-base voltage VEBO: 2V; (5)Collector current IC: 150 mA; (6)Base current IB: 20mA; (7)Total power dissipation,Ptot: 1 W; (8)Junction temperature Tj: 150℃; (9)Ambient temperature TA: -65 to 150℃; (10)Storage temperature Tstg: -65 to 150℃.

Features

BFG135A features: (1)For low-distortion broadband amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA; (2)Power amplifiers for DECT and PCN systems; (3)Integrated emitter ballast resistor; (4)fT = 6 GHz.

Diagrams

BFG135A block diagram

BFG10
BFG10
Other

Data Sheet
Negotiable 
BFG10/X
BFG10/X
Other

Data Sheet
Negotiable 
BFG10/X,215
BFG10/X,215
NXP Semiconductors
Transistors RF Bipolar Small Signal Single NPN 8V 250mA 400mW 25
Data Sheet
0-2150: $0.29
2150-3000: $0.28
3000-6000: $0.27
BFG10W
BFG10W
Other

Data Sheet
Negotiable 
BFG10W/X,115
BFG10W/X,115
NXP Semiconductors
Transistors RF Bipolar Small Signal TAPE-7 TNS-RFSS
Data Sheet
0-1: $0.67
1-25: $0.61
25-100: $0.53
100-250: $0.46
BFG10X
BFG10X
Other

Data Sheet
Negotiable