Product Summary

The BLF369 is a 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. The applications of the BLF369 include Communication transmitter applications in the UHF band, Industrial applications in the UHF band.

Parametrics

BLF369 absolute maximum ratings: (1)drain-source voltage: 65 V; (2)gate-source voltage: -0.5 to +13 V; (3)storage temperature: -65 to +150 ℃; (4)junction temperature: 200 ℃.

Features

BLF369 features: (1)Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: Load power PL = 500 W, Power gain Gp 3 18 dB, Drain efficiency hD = 60 %; (2)Advanced flange material for optimum thermal behavior and reliability; (3)Excellent ruggedness; (4)High power gain; (5)Designed for broadband operation (HF/VHF band); (6)Source on underside eliminates DC isolators, reducing common-mode inductance; (7)Easy power control; (8)Integrated ESD protection.

Diagrams

BLF369 symbol

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLF369
BLF369

NXP Semiconductors (founded by Philips)

TRANSISTOR RF LDMOS SOT800

Data Sheet

Negotiable 
BLF369,112
BLF369,112

NXP Semiconductors

Transistors RF MOSFET Power RF LDMOS 65V 100A

Data Sheet

0-35: $193.55