Product Summary

The BLF878 is a 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of BLF878 makes it ideal for digital transmitter applications. The applications of the device include Communication transmitter applications in the UHF band and Industrial applications in the UHF band.

Parametrics

BLF878 absolute maximum ratings: (1)drain-source voltage: 89 V; (2)gate-source voltage: -0.5 to +13 V; (3)storage temperature: -65 to +150 ℃; (4)junction temperature: - 200 ℃.

Features

BLF878 features: (1)2-tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: Peak envelope power load power = 300 W, Power gain = 21 dB, Drain efficiency = 46 %, Third order intermodulation distortion = -35 dBc; (2)DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: Average output power = 75 W, Power gain = 21 dB, Drain efficiency = 32 %, Third order intermodulation distortion = -32 dBc (4.3 MHz from center frequency).

Diagrams

BLF878 circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLF878
BLF878

NXP Semiconductors

Transistors RF MOSFET Power LDMOS TNS

Data Sheet

Negotiable 
BLF878,112
BLF878,112

NXP Semiconductors

Transistors RF MOSFET Power LDMOS TNS

Data Sheet

0-46: $121.93