(China (Mainland))
Product Summary
The BLF888 is a 600W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. The applications of the BLF888 include Communication transmitter applications in the UHF band, Industrial applications in the UHF band.
Parametrics
BLF888 absolute maximum ratings: (1)VDS drain-source voltage: 110 V; (2)VGS gate-source voltage: -0.5 to +11 V; (3)Tstg storage temperature: -65 to +150 ℃; (4)Tj junction temperature: - 200 ℃.
Features
BLF888 features: (1)Excellent ruggedness (VSWR ≥ 40 : 1 through all phases); (2)Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W; (3)High power gain; (4)High efficiency; (5)Designed for broadband operation (470 MHz to 860 MHz); (6)Internal input matching for high gain and optimum broadband operation; (7)Excellent reliability; (8)Easy power control; (9)Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 BLF888 |
NXP Semiconductors |
Transistors RF MOSFET Power 500W, 470-860MHz |
Data Sheet |
Negotiable |
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BLF888,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR RF PWR LDMOS |
Data Sheet |
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BLF888A,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF POWER LDMOS TRANSISTOR |
Data Sheet |
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BLF888AS,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF POWER LDMOS TRANSISTOR |
Data Sheet |
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BLF888B,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF pwr LDMOS transistor |
Data Sheet |
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BLF888BS,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF pwr LDMOS transistor |
Data Sheet |
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