Product Summary

The BTS5235-2G is a dual channel high-side power switch in PG-DSO-20-43 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. The applications of the BTS5235-2G include μC compatible high-side power switch with diagnostic feedback for 12 V grounded loads, All types of resistive, inductive and capacitve loads, Suitable for loads with high inrush currents, so as lamps, Suitable for loads with low currents, so as LEDs and Replaces electromechanical relays, fuses and discrete circuits.

Parametrics

BTS5235-2G absolute maximum ratings: (1)supply voltage, Vbb: -16 to 28V; (2)supply voltage for full short circuit protection, Vbb(SC): 0 to 28V; (3)voltage at power transistor, VDS: 52V; (4)supply voltage for load dump protection, Vbb(LD): 41V; (5)load current, IL: IL(LIM); (6)maximum energy dissipation single pulse, EAS: 110mJ; (7)power dissipation (DC), Ptot: 1.4W; (8)voltage at input pin, VIN: -5 to 10V; (9)current through input pin, IIN: -20 to 2.0mA; (10)voltage at sense enable pin, VSEN: -5 to 10V; (11)current through sense enable pin, ISEN: -2.0 to 2.0mA; (12)current through sense pin, IIS: -25 to 10mA; (13)junction temperature, Tj: -40 to 150℃; (14)storage temperature, Tstg: -55 to 150℃.

Features

BTS5235-2G features: (1)Very low standby current; (2)3.3 V and 5 V compatible logic pins; (3)Improved electromagnetic compatibility (EMC); (4)Stable behavior at under voltage; (5)Logic ground independent from load ground; (6)Secure load turn-off while logic ground disconnected; (7)Optimized inverse current capability; (8)Green Product (RoHS compliant); (9)AEC Qualified.

Diagrams

BTS5235-2G block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BTS5235-2G
BTS5235-2G

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Data Sheet

0-1: $1.70
1-10: $1.52
10-100: $1.25
100-250: $1.12
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Data Sheet

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