(China (Mainland))
Product Summary
The FQPF2N80 is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF2N80 is well suited for high efficiency switch mode power supply.
Parametrics
FQPF2N80 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 800 V; (2)ID Drain Current: 1.5 A; (3)IDM Drain Current: 6.0 A; (4)VGSS Gate-Source Voltage:± 30 V; (5)EAS Single Pulsed Avalanche Energy : 180 mJ; (6)IAR Avalanche Current: 1.5 A; (7)EAR Repetitive Avalanche Energy : 3.5 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.0 V/ns; (9)PD Power Dissipation: 35 W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (11)TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.
Features
FQPF2N80 features: (1)1.5A, 800V, RDS(on) = 6.3Ω @VGS = 10 V; (2)Low gate charge ( typical 12 nC); (3)Low Crss ( typical 5.5 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQPF2N80 |
Fairchild Semiconductor |
MOSFET 800V N-Channel QFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FQPF10N20 |
Fairchild Semiconductor |
MOSFET 200V N-Ch MOSFET |
Data Sheet |
Negotiable |
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FQPF10N20C |
Fairchild Semiconductor |
MOSFET 200V N-Ch MOSFET |
Data Sheet |
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FQPF10N20T |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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FQPF10N50CF |
Fairchild Semiconductor |
MOSFET 500V N-Ch MOSFET |
Data Sheet |
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FQPF10N60C |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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FQPF10N60CF |
Fairchild Semiconductor |
MOSFET 600V N-Ch MOSFET |
Data Sheet |
Negotiable |
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