Product Summary

TheIRFD110PBF is a Single N-Channel, Power MOSFET from international rectifier the designer with the best combination of fast switching, ruggedized device, low on resistance and cost effectiveness. The 4pin DIP package IRFD110PBF is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.

Parametrics

IRFD110PBF absolute maximum ratings: (1)Drain to Source Voltage, VDS: 100V; (2)Drain to Gate Voltage (RGS = 20kΩ), VDGR: 100V; (3)Continuous Drain Current, ID: 1.0A; (4)Pulsed Drain Current, IDM: 8.0A ; (5)Gate to Source Voltage, VGS: ±20V; (6)Maximum Power Dissipation, PD: 1.0W; (7)Linear Derating Factor: 0.008W/℃; (8)Single Pulse Avalanche Energy Rating, EAS: 19mJ; (9)Operating and Storage Temperature, TJ, TSTG: -55 to 150℃; (10)Leads at 0.063in (1.6mm) from Case for 10s, TL: 300℃.

Features

IRFD110PBF features: (1)1A, 100V; (2)rDS(ON) = 0.600Ω; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance; (8)Related Literature.

Diagrams

IRFD110PBF simplified diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFD110PBF
IRFD110PBF

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