Product Summary
TheIRFD110PBF is a Single N-Channel, Power MOSFET from international rectifier the designer with the best combination of fast switching, ruggedized device, low on resistance and cost effectiveness. The 4pin DIP package IRFD110PBF is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.
Parametrics
IRFD110PBF absolute maximum ratings: (1)Drain to Source Voltage, VDS: 100V; (2)Drain to Gate Voltage (RGS = 20kΩ), VDGR: 100V; (3)Continuous Drain Current, ID: 1.0A; (4)Pulsed Drain Current, IDM: 8.0A ; (5)Gate to Source Voltage, VGS: ±20V; (6)Maximum Power Dissipation, PD: 1.0W; (7)Linear Derating Factor: 0.008W/℃; (8)Single Pulse Avalanche Energy Rating, EAS: 19mJ; (9)Operating and Storage Temperature, TJ, TSTG: -55 to 150℃; (10)Leads at 0.063in (1.6mm) from Case for 10s, TL: 300℃.
Features
IRFD110PBF features: (1)1A, 100V; (2)rDS(ON) = 0.600Ω; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance; (8)Related Literature.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFD110PBF |
Vishay Semiconductors |
MOSFET 100V Single N-Channel HEXFET |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFD010 |
Vishay/Siliconix |
MOSFET N-Chan 50V 1.7 Amp |
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IRFD010PBF |
Vishay Semiconductors |
MOSFET N-Chan 50V 1.7 Amp |
Data Sheet |
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IRFD014 |
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MOSFET N-Chan 60V 1.7 Amp |
Data Sheet |
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IRFD014, SiHFD014 |
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Negotiable |
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IRFD014PBF |
Vishay Semiconductors |
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Data Sheet |
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IRFD020 |
Vishay/Siliconix |
MOSFET N-Chan 50V 2.4 Amp |
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