(China (Mainland))
Product Summary
The IRGP4063DPBF is an insulated gate bipolar transistor with ultrafast soft recovery diode.
Parametrics
IRGP4063DPBF absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current: 96 A; (3)IC @ TC = 100℃ Continuous Collector Current: 48 A; (4)ICM Pulse Collector Current: 144 A; (5)ILM Clamped Inductive Load Current: 192 A; (6)IF @ TC = 25℃ Diode Continous Forward Current: 96 A; (7)IF @ TC = 100℃ Diode Continous Forward Current: 48 A; (8)IFM Diode Maximum Forward Current: 192 A; (9)VGE Continuous Gate-to-Emitter Voltage: ±20 V; (10)Transient Gate-to-Emitter Voltage: ±30 V; (11)PD @ TC = 25℃ Maximum Power Dissipation: 330 W; (12)PD @ TC = 100℃ Maximum Power Dissipation: 170; (13)TJ Operating Junction and TSTG Storage Temperature Range: -55 to +175 ℃.
Features
IRGP4063DPBF features: (1)Low VCE (ON) Trench IGBT Technology; (2)Low switching losses; (3)Maximum Junction temperature 175 ℃; (4)5 μs short circuit SOA; (5)Square RBSOA; (6)100% of the parts tested for 4X rated current (ILM); (7)Positive VCE (ON) Temperature co-efficient; (8)Ultra fast soft Recovery Co-Pak Diode; (9)Tight parameter distribution; (10)Lead Free Package.
Diagrams
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 IRGP4063DPBF |
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