Product Summary

The IRLR3410TRPBF is a HEXFET Power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRLR3410TRPBF is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The IRLR3410TRPBF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parametrics

IRLR3410TRPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 17A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 12 A; (3)IDM Pulsed Drain Current: 60A; (4)PD @TC = 25℃ Power Dissipation: 79 W; (5)Linear Derating Factor: 0.53 W/℃; (6)VGS Gate-to-Source Voltage: ± 16 V; (7)EAS Single Pulse Avalanche Energy: 150 mJ; (8)IAR Avalanche Current: 9.0 A; (9)EAR Repetitive Avalanche Energy: 7.9 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ, TSTG Operating Junction and Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case ).

Features

IRLR3410TRPBF features: (1)Logic Level Gate Drive; (2)Ultra Low On-Resistance; (3)Surface Mount (IRLR3410); (4)Straight Lead (IRLU3410); (5)Advanced Process Technology; (6)Fast Switching; (7)Fully Avalanche Rated; (8)Lead-Free.

Diagrams

IRLR3410TRPBF block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRLR3410TRPBF
IRLR3410TRPBF

International Rectifier

MOSFET

Data Sheet

0-1350: $0.26
1350-2000: $0.25
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
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IRLR/U230A

Other


Data Sheet

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Data Sheet

0-1: $1.70
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10-100: $1.24
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