(China (Mainland))
Product Summary
The K6X4008C1F-VB55 is a CMOS SRAM. The K6X4008C1F-VB55 is fabricated by SAMSUNG’s advanced full CMOS process technology. The K6X4008C1F-VB55 supports various operating temperature range and various package types for user flexibility of system design. It also supports low data retention voltage for battery backup operation with low data retention current.
Parametrics
K6X4008C1F-VB55 absolute maximum ratings: (1) Voltage on any pin relative to Vss VIN, VOUT: -0.5V to VCC+0.5V (max. 7.0V); (2) Voltage on Vcc supply relative to Vss VCC: -0.3V to 7.0V; (3) Power Dissipation PD: 1.0W; (4) Storage temperature TSTG: -65℃ to 150℃; (5) Operating Temperature TA: 0℃ to 70℃.
Features
K6X4008C1F-VB55 features: (1) Process Technology: Full CMOS; (2) Organization: 512Kx8; (3) Power Supply Voltage: 4.5V to 5.5V; (4) Low Data Retention Voltage: 2V (Min); (5) Three state output and TTL compatible; (6) Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R.
Diagrams
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K6X4008C1F-B |
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K6X4008C1F-BF55 |
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K6X4008C1F-F |
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K6X4008C1F-Q |
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K6X4008C1F-UF55 (ROHS) |
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