Product Summary

The SPD04N60C3 is a power transistor.

Parametrics

SPD04N60C3 absolute maximum ratings: (1)pulsed drain current, ID puls: 13.5mJ; (2)avalanche energy, single pulse, EAS: 130mJ; (3)avalanche energy, EAR: 0.4mJ; (4)avalanche current, repetitive tAR limited by Tjmax, IAR: 4.5A; (5)gate source voltage AC, VGS: ±30V; (6)power dissipation, Ptot: 50W; (7)operating and storage temperature, Tj, Tstg: -55 to 150℃.

Features

SPD04N60C3 features: (1)new revolutionary high voltage technology; (2)ultra low gate charge; (3)periodic avalanche rated; (4)extreme dv/dt rated; (5)high peak current capability; (6)improved transconductance; (7)Pb-free lead plating; RoHS compliant; (8)qualified according to JEDEC for target applicaitons.

Diagrams

SPD04N60C3 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SPD04N60C3
SPD04N60C3

Infineon Technologies

MOSFET COOL MOS N-CH 650V 4.5A

Data Sheet

0-1: $1.04
1-10: $0.82
10-100: $0.70
100-500: $0.61
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(USD)
Quantity
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Infineon Technologies

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Data Sheet

0-1: $0.68
1-10: $0.54
10-100: $0.46
100-500: $0.39
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Data Sheet

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1-10: $0.57
10-100: $0.45
100-500: $0.42
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Infineon Technologies

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Data Sheet

0-1550: $0.29
1550-2000: $0.24
2000-2500: $0.24
2500-5000: $0.23