Product Summary
The SPD04N60C3 is a power transistor.
Parametrics
SPD04N60C3 absolute maximum ratings: (1)pulsed drain current, ID puls: 13.5mJ; (2)avalanche energy, single pulse, EAS: 130mJ; (3)avalanche energy, EAR: 0.4mJ; (4)avalanche current, repetitive tAR limited by Tjmax, IAR: 4.5A; (5)gate source voltage AC, VGS: ±30V; (6)power dissipation, Ptot: 50W; (7)operating and storage temperature, Tj, Tstg: -55 to 150℃.
Features
SPD04N60C3 features: (1)new revolutionary high voltage technology; (2)ultra low gate charge; (3)periodic avalanche rated; (4)extreme dv/dt rated; (5)high peak current capability; (6)improved transconductance; (7)Pb-free lead plating; RoHS compliant; (8)qualified according to JEDEC for target applicaitons.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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SPD04N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 4.5A |
Data Sheet |
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Infineon Technologies |
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Infineon Technologies |
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