Product Summary

The SPP20N65C3 is a Power Transistor.

Parametrics

SPP20N65C3 absolute maximum ratings: (1)Continuous drain current, ID: 20.7A; (2)Pulsed drain current, tp limited by Tjmax, ID puls: 62.1 A; (3)Avalanche energy, single pulse, EAS: 690 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax, EAR: 1mJ; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 7 A; (6)Gate source voltage, VGS: ±20V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, Ptot: 208W; (9)Operating and storage temperature, Tj , Tstg: -55 to +150℃.

Features

SPP20N65C3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance.

Diagrams

SPP20N65C3 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SPP20N65C3
SPP20N65C3

Infineon Technologies

MOSFET COOL MOS N-CH 650V 20.7

Data Sheet

Negotiable 
SPP20N65C3XKSA1
SPP20N65C3XKSA1

Infineon Technologies

MOSFET

Data Sheet

0-1: $2.93
1-10: $2.62
10-100: $2.14
100-500: $1.73