Product Summary
The IPD15N06S2L-64 is a power transistor.
Parametrics
IPD15N06S2L-64 absolute maximum ratings: (1)Continuous drain current ,ID: 13A; (2)Pulsed drain current, ID,pulse: 76A; (3)Avalanche energy, single pulse, EAS: 43 mJ; (4)Gate source voltage VGS: ±20 V; (5)Power dissipation Ptot: 47 W; (6)Operating and storage temperature Tj, Tstg: -55 to +175℃.
Features
IPD15N06S2L-64 features: (1)N-channel Logic Level - Enhancement mode; (2)Automotive AEC Q101 qualified; (3)MSL1 up to 260℃ peak reflow; (4)175℃ operating temperature; (5)Green package (lead free); (6)Ultra low Rds(on); (7)100% Avalanche tested.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IPD15N06S2L-64 |
Infineon Technologies |
MOSFET OPTIMOS PWR-TRANS N-CH 55V 19A |
Data Sheet |
Negotiable |
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Quantity | |||||||||||||
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Infineon Technologies |
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Data Sheet |
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Infineon Technologies |
MOSFET |
Data Sheet |
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IPD105N04L G |
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Data Sheet |
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IPD10N03LA |
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IPD10N03LA G |
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Data Sheet |
Negotiable |
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IPD10N03LAG |
Infineon Technologies |
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Data Sheet |
Negotiable |
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